2SC5376FV 2004-06-07 1 toshiba transistor silicon npn epitaxial type 2SC5376FV audio frequency general purpose amplifier applications for muting and switching applications ? low collector saturation voltage: v ce (sat) (1) = 15 mv (typ.) @i c = 10 ma/i b = 0.5 ma ? high collector current: i c = 400 ma (max) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5 v collector current i c 400 ma base current i b 50 ma collector power dissipation p c 150 * mw junction temperature t j 150 c storage temperature range t stg ? 55~150 c * : mounted on fr4 board (25.4 mm 25.4 mm 1.6mmt) marking unit: mm jedec D jeita D toshiba 2-1l1a weight: 0.0015g (typ.) f a type name h fe classification 1.base 2.emitter 3.collector vesm 1.2 0.05 0.32 0.05 1 2 3 0.4 0.4 0.22 0.05 0.8 0.05 0.8 0.05 1.2 0.05 0.5 0.05 0.13 0.05 0.5mm 0.45mm 0.45mm 0.4mm
2SC5376FV 2004-06-07 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 15 v, i e = 0 ? ? 0.1 a emitter cut-off current i ebo v eb = 5 v, i c = 0 ? ? 0.1 a dc current gain h fe (note) v ce = 2 v, i c = 10 ma 300 ? 1000 v ce (sat) (1) i c = 10 ma, i b = 0.5 ma ? 15 30 mv collector-emitter saturation voltage v ce (sat) (2) i c = 200 ma, i b = 10 ma ? 110 250 mv base-emitter voltage v be (sat) i c = 200 ma, i b = 10 ma ? 0.87 1.2 v transition frequency f t v ce = 2 v, i c = 10 ma 80 130 ? mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz ? 4.2 ? pf collector-emitter on resistance r on i b = 1 ma, v in = 1 v rms , f = 1 khz ? 0.9 ? ? turn-on time t on ? 85 ? ns storage time t stg ? 170 ? ns switching time falll time t f ? 40 ? ns note: h fe classification a: 300 ~ 600, b: 500 ~ 1000 50 ? 60 ? output 600 ? 300 ? v cc = 6 v v bb = ? 3 v input 0 v 10 s duty cycle < = = ? ib2 = 5 ma
2SC5376FV 2004-06-07 3 i c ? v be collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (ma) base-emitter voltage v be (v) collector current i c (ma) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) collector-base voltage v cb (v) c ob ? v cb collector output capacitance c ob (pf) collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (mv) 50 0.1 3 500 10 1 0.3 30 common emitter i c /i b = 20 ta = 25c 30 10 0.1 5 3 1 0.5 0.3 100 300 0.0 1 0.8 0.4 1.2 common emitter v ce = 2v ta = 100c 25 ? 25 300 1000 1.6 500 30 100 50 3 10 5 i e = 0 a f = 1 mhz ta = 25c 100 0.1 3 100 10 1 0.3 30 50 30 1 10 5 3 0 5 3 4 1 2 0 0.6 0.2 common emitter ta = 25c 0.8 ib = 0.5 ma 6 0.4 1.0 5 4 3 2 1 10000 0.1 3 1000 10 1 0.3 30 5000 3000 10 1000 500 300 100 50 30 100 300 common emitter v ce = 2 v ta = 100c 25 ? 25 1000 0.1 3 1000 10 1 0.3 30 common emitter i c /i b = 20 500 ta = 100c 25 300 1 ? 25 100 50 30 10 5 3 100 300
2SC5376FV 2004-06-07 4 ambient temperature ta ( c) p c ? ta collector power dissipation p c (mw) 200 0 175 125 100 50 150 75 25 150 0 50 100 mounted on fr4 board ( 25.4 mm 25.4 mm 1.6 mmt )
2SC5376FV 2004-06-07 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to im prove the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their i nherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buy er, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semic onductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold , under an y law and re g ulations. 030619ea a restrictions on product use
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